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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1873
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The PA1873 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
8
PACKAGE DRAWING (Unit : mm)
5 1 2, 3 4 5 6, 7 8 : Drain1 : Source1 : Gate1 : Gate2 : Source2 : Drain2
1.2 MAX. 1.00.05 0.25 3 +5 -3 0.10.05 0.5 0.6 +0.15 -0.1
FEATURES
* 2.5 V drive available * Low on-state resistance RDS(on)1 = 23.0 m MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 24.0 m MAX. (VGS = 4.0 V, ID = 3.0 A) RDS(on)3 = 28.0 m MAX. (VGS = 3.1 V, ID = 3.0 A) RDS(on)4 = 29.0 m MAX. (VGS = 2.5 V, ID = 3.0 A) * Built-in G-S protection diode against ESD
1 4
0.145 0.055
3.15 0.15 3.0 0.1
6.4 0.2 4.4 0.1 1.0 0.2
ORDERING INFORMATION
PART NUMBER PACKAGE
0.65 0.8 MAX.
PA1873GR-9JG
0.1
Power TSSOP8
0.27 +0.03 -0.08
0.10 M
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25C) Drain Current (pulse)
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
20 12 6.0 80 2.0 150 -55 to +150
V V A A W C C
Gate1
EQUIVALENT CIRCUIT
Drain1 Drain2
Body Diode
Gate2 Gate Protection Diode Source2
Body Diode
Total Power Dissipation (2 unit) Channel Temperature Storage Temperature
Gate Protection Diode Source1
Notes 1. PW 10 s, Duty Cycle 1% 2 2. Mounted on ceramic substrate of 5000 mm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G15629EJ1V0DS00 (1st edition) Date Published December 2001 NS CP(K) Printed in Japan
(c)
2001
PA1873
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 16 V VGS = 4.0 V ID = 6.0 A IF = 6.0 A, VGS = 0 V IF = 6.0 A, VGS = 0 V di/dt = 50 A / s TEST CONDITIONS VDS = 20 V, VGS = 0 V VGS = 12 V, VDS = 0 V VDS = 10 V, ID = 1.0 mA VDS = 10 V, ID = 3.0 A VGS = 4.5 V, ID = 3.0 A VGS = 4.0 V, ID = 3.0 A VGS = 3.1 V, ID = 3.0 A VGS = 2.5 V, ID = 3.0 A VDS = 10 V VGS = 0 V f = 1.0 MHz VDD = 10 V, ID = 3.0 A VGS = 4.0 V RG = 10 0.5 5.0 13.0 14.0 14.5 15.0 18.0 19.0 21.5 24.5 705 205 145 60 310 380 420 9.0 2.0 4.0 0.84 480 1200 23.0 24.0 28.0 29.0 1.0 MIN. TYP. MAX. 10 10 1.5 UNIT
A A
V S m m m m pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T. RL VGS PG. RG
Wave Form
VGS
0 10% VGS 90%
IG = 2 mA 50
RL VDD
VDD
PG.
90%
VDS
90% 10% 10%
VGS 0 = 1 s Duty Cycle 1%
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
2
Data Sheet G15629EJ1V0DS
PA1873
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80
FORWARD BIAS SAFE OPERATING AREA 1000 100
ited Lim ) (on) RDS = 4.5 V GS (V
ID (pulse)
dT - Derating Factor - %
PW
ID - Drain Current - A
60
10
ID (DC)
1m s
10 ms 100 ms
100 s
=1 0
s
40
1
DC
20
0.1
Single Pulse PD (FET1) : PD (FET2) = 1:1
0
0
30 60 120 90 TA - Ambient Temperature - C
150
0.01 0.1
10 1 VDS - Drain to Source Voltage - V
100
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 25 Pulsed
FORWARD TRANSFER CHARACTERISTICS 100 10 Pulsed VDS = 10 V
ID - Drain Current - A
20
ID - Drain Current - A
1 0.1 0.01 0.001 0.0001
TA = 125C TA = 25C 75C -25C
15
VGS = 4.5 V 4.0 V
10 3.1 V 5 2.5 V
0 0
0.00001
0.2 0.4 0.6 0.8 1.0 VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
| yfs | - Forward Transfer Admittance - S
0
0.5
1
1.5
2
2.5
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE Vs. DRAIN CURRENT 100.00 VDS = 10 V Pulsed
1.5 VDS = 10 V ID = 1mA
VGS(off) - Gate Cut-off Voltage - V
10.00 TA = -25C 1.00 25C 75C 0.10 125C
1.0
0.5 -50
0
50
100
150
0.01 0.01
0.1
1
10
100
Tch - Channel Temperature - C
Data Sheet G15629EJ1V0DS
ID - Drain Current - A
3
PA1873
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 Pulsed VGS = 2.5 V TA = 125C 30 75C 25C -25C 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 Pulsed VGS = 3.1 V
RDS(on) - Drain to Source On-state Resistance - m
RDS(on) - Drain to Source On-state Resistance - m
30
TA = 125C 75C 25C
20 -25C
10 0.01
0.1
1
10
100
10 0.01
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 Pulsed VGS = 4.0 V
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 Pulsed VGS = 4.5 V
RDS(on) - Drain to Source On-state Resistance - m
RDS(on) - Drain to Source On-state Resistance - m
30 TA = 125C 75C 20 25C -25C
30 TA = 125C 75C 20 25C -25C
10 0.01
0.1
1
10
100
10 0.01
0.1
1
10
100
ID - Drain Current - A
RDS (on) - Drain to Source On-state Resistance - m
ID - Drain Current - A
RDS (on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
40
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
60 50 40 30 20 10 0 0 Pulsed ID = 3.0 A
Pulsed ID = 3 A
VGS = 2.5 V
30
3.1 V 4.0 V 4.5 V
20
10 -50 0 50 100 150
2
4
6
8
10
12
Tch - Channel Temperature - C
VGS - Gate to Source Voltage - V
Data Sheet G15629EJ1V0DS
4
PA1873
SWITCHING CHARACTERISTICS 1000
td(on), tr, td(off), tf - Switching Time - ns
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 V f = 1 MHz
td (off) tf
1000 Ciss
tr 100 td (on)
100
Coss Crss
10 0.1
1
10
100
10 0.1
VDD = 10 V VGS = 4.0 V RG = 10
1 ID - Drain Current - A
10
VDS - Drain to Source Voltage - V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100
IF - Diode Forward Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 5
VGS - Gate to Source Voltage - V
Pulsed VGS = 0 V
ID = 6.0 A VDD = 16 V
4 10 V 3
10
1
2
0.1
1
0.01 0.4
0.6
0.8
1.0
1.2
0
0
VF(S-D) - Source to Drain Voltage - V
4 8 QG - Gate Charge - nC
12
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
Single Pulse PD (FET1) : PD (FET2) = 1:1 Mounted on FR-4 board of 25 cm2 x 1.6 mm 125C/W
rth(ch-A) - Transient Thermal Resistance - C/W
100
Mounted on ceramic board of 50 cm2 x 1.1 mm 62.5C/W
10
1
0.1 0.001
0.01
0.1
1 PW - Pulse Width - s
10
100
1000
Data Sheet G15629EJ1V0DS
5
PA1873
[MEMO]
6
Data Sheet G15629EJ1V0DS
PA1873
[MEMO]
Data Sheet G15629EJ1V0DS
7
PA1873
* The information in this document is current as of December, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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